Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode
| dc.citation.epage | en_US | |
| dc.citation.issue | 11 | en_US |
| dc.citation.volume | 101 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Xuan, Rong | en_US |
| dc.contributor.author | Kuo, Wei-Hong | en_US |
| dc.contributor.author | Hu, Chih-Wei | en_US |
| dc.contributor.author | Lin, Suh-Fang | en_US |
| dc.contributor.author | Chen, Jenn-Fang | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:28:19Z | |
| dc.date.available | 2014-12-08T15:28:19Z | |
| dc.date.issued | 2012-09-10 | en_US |
| dc.description.abstract | This paper presents an approach in fabricating normally off AlGaN/GaN high electron mobility transistors (HEMTs). The fabrication technique was based on the carbon-doped GaN epitaxy layers on silicon substrate and the nano rod structure of the gate region in AlGaN/GaN HEMTs. Using this method, the threshold voltage of AlGaN/GaN HEMTs can be shifted from -2 V in a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 2 V in an enhancement-mode (E-mode) AlGaN/GaN HEMT. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752113] | en_US |
| dc.identifier.doi | 10.1063/1.4752113 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4752113 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20479 | |
| dc.identifier.wosnumber | WOS:000309329300038 | |
| dc.language.iso | en_US | en_US |
| dc.title | Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode | en_US |
| dc.type | Article | en_US |