Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure
| dc.citation.epage | 1809 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 1807 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.citation.woscount | 16 | |
| dc.contributor.author | Chang, KM | en_US |
| dc.contributor.author | Chu, JY | en_US |
| dc.contributor.author | Cheng, CC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:38:46Z | |
| dc.date.available | 2014-12-08T15:38:46Z | |
| dc.date.issued | 2004-08-01 | en_US |
| dc.description.abstract | Indium-tin-oxide (ITO) is deposited as a transparent current spreading layer of GaN-based light-emitting diodes (LEDs). To reduce the interfacial Schottky barrier height, a thin p-In0.1Ga0.9N layer is grown as an intermediate between ITO And p-GaN. The contact resistivity around 2.6 x 10(-2) Omega . cm(2) results in a moderately high forward voltage LED of 3.43 V operated at 20 mA. However, the external quantum efficiency and power efficiency are enhanced by 46% and 36%, respectively, in comparison with the conventional Ni-Au contact LEDs. In the life test, the power degradation of the p-In0.1Ga0.9N-ITO contact samples also exhibits a lower value than that of the conventional ones. | en_US |
| dc.identifier.doi | 10.1109/LPT.2004.830523 | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LPT.2004.830523 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26528 | |
| dc.identifier.wosnumber | WOS:000222884300005 | |
| dc.language.iso | en_US | en_US |
| dc.subject | GaN | en_US |
| dc.subject | indium-tin-oxide (ITO) | en_US |
| dc.subject | In0.1Ga0.9N | en_US |
| dc.subject | light-emitting diodes (LEDs) | en_US |
| dc.title | Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure | en_US |
| dc.type | Article | en_US |