下一世代高性能及高可靠性的N通道MOS元件設計及量測技術探討
| dc.contributor.author | 莊紹勳 | en_US |
| dc.contributor.author | Chung Steve S | en_US |
| dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:42:09Z | |
| dc.date.available | 2014-12-13T10:42:09Z | |
| dc.date.issued | 2011 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC98-2221-E009-161-MY3 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=2205386&docId=351807 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/98976 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 下一世代高性能及高可靠性的N通道MOS元件設計及量測技術探討 | zh_TW |
| dc.title | Key Design and Measurement Issues for Achieving High Performance and High Reliability Next Generation N-Channel Mosfets | en_US |
| dc.type | Plan | en_US |