POST-EPITAXIAL POLYSILICON AND SI3N4 GETTERING IN SILICON
| dc.citation.epage | 1299 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 1294 | en_US |
| dc.citation.volume | 129 | en_US |
| dc.citation.woscount | 27 | |
| dc.contributor.author | CHEN, MC | en_US |
| dc.contributor.author | SILVESTRI, VJ | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:06:23Z | |
| dc.date.available | 2014-12-08T15:06:23Z | |
| dc.date.issued | 1982 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4954 | |
| dc.identifier.wosnumber | WOS:A1982NS83700036 | |
| dc.language.iso | en_US | en_US |
| dc.title | POST-EPITAXIAL POLYSILICON AND SI3N4 GETTERING IN SILICON | en_US |
| dc.type | Article | en_US |