新世代鐵電非揮發性記憶元件(I)

Date

Authors

TSEUNG-YUENTSENG

Keywords

非揮發性記憶元件 , 鐵電記憶元件 , 新世代 , Nonvolatile memory device , Ferroelectric memory device , Next generqation

URI

https://www.grb.gov.tw/search/planDetail?id=676562&docId=129095
https://ir.lib.nycu.edu.tw/handle/11536/93453

Collections

研究計畫;;Research Plans