High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in NOR-Type Flash Memory
| dc.citation.epage | 2338 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 2335 | en_US |
| dc.citation.volume | 57 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Wang, Kuan-Ti | en_US |
| dc.contributor.author | Chao, Tien-Sheng | en_US |
| dc.contributor.author | Wu, Woei-Cherng | en_US |
| dc.contributor.author | Yang, Wen-Luh | en_US |
| dc.contributor.author | Lee, Chien-Hsing | en_US |
| dc.contributor.author | Hsieh, Tsung-Min | en_US |
| dc.contributor.author | Liou, Jhyy-Cheng | en_US |
| dc.contributor.author | Wang, Shen-De | en_US |
| dc.contributor.author | Chen, Tzu-Ping | en_US |
| dc.contributor.author | Chen, Chien-Hung | en_US |
| dc.contributor.author | Lin, Chih-Hung | en_US |
| dc.contributor.author | Chen, Hwi-Huang | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:48:23Z | |
| dc.date.available | 2014-12-08T15:48:23Z | |
| dc.date.issued | 2010-09-01 | en_US |
| dc.description.abstract | For the first time, a high-performance (tau(PGM) = 200 ns/tau(ERS) = 5 ms) cell with superior reliability characteristics is demonstrated in a NOR-type architecture, using dynamic-threshold source-side injection (DTSSI) in a wrapped select-gate silicon-oxide-nitride-oxide-silicon memory device, with multilevel and 2-bit/cell operation. Using DTSSI enables easy extraction of the multilevel states with a tight V(TH) distribution, a nearly negligible second-bit effect, superior endurance characteristics, and good data retention. | en_US |
| dc.identifier.doi | 10.1109/TED.2010.2054530 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TED.2010.2054530 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32226 | |
| dc.identifier.wosnumber | WOS:000283138200039 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Flash memory | en_US |
| dc.subject | multilevel states in a cell (MLC) | en_US |
| dc.subject | NOR | en_US |
| dc.subject | silicon-oxide-nitride-oxide-silicon (SONOS) | en_US |
| dc.title | High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in NOR-Type Flash Memory | en_US |
| dc.type | Article | en_US |