New high-speed low-power current-mode CMOS sense amplifier
| dc.citation.epage | 370 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 367 | en_US |
| dc.citation.volume | 26 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Wang, SM | en_US |
| dc.contributor.author | Wu, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:40:57Z | |
| dc.date.available | 2014-12-08T15:40:57Z | |
| dc.date.issued | 2003-05-01 | en_US |
| dc.description.abstract | A novel low-power current-mode sense amplifier for fast CMOS SRAM applications is presented. It is based on the current mode approach. The sensing speed is independent of the bit-line and data-line capacitances and a separated positive feedback technique is employed to give the circuit high-speed, low-power operation. Based on the new current-mode sense amplifier, a 32Kx8 SRAM chip was designed and fabricated. The access time is 9ns at a supply voltage of 3V and the active current is 28mA at 100MHz. | en_US |
| dc.identifier.issn | 0253-3839 | en_US |
| dc.identifier.journal | JOURNAL OF THE CHINESE INSTITUTE OF ENGINEERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27908 | |
| dc.identifier.wosnumber | WOS:000183065300012 | |
| dc.language.iso | en_US | en_US |
| dc.subject | current-mode | en_US |
| dc.subject | sense amplifier | en_US |
| dc.subject | SRAM | en_US |
| dc.subject | positive feedback | en_US |
| dc.title | New high-speed low-power current-mode CMOS sense amplifier | en_US |
| dc.type | Article | en_US |