Temperature-dependent carrier-phonon coupling in topological insulator Bi2Se3
| dc.citation.issue | 23 | en_US |
| dc.citation.volume | 105 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Lai, Yi-Ping | en_US |
| dc.contributor.author | Chen, Hsueh-Ju | en_US |
| dc.contributor.author | Wu, Kuang-Hsiung | en_US |
| dc.contributor.author | Liu, Jia-Ming | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2015-07-21T11:21:01Z | |
| dc.date.available | 2015-07-21T11:21:01Z | |
| dc.date.issued | 2014-12-08 | en_US |
| dc.description.abstract | Temperature-dependent (11.0K +/- 294.5 K) carrier-phonon coupling in Bi2Se3 is investigated by ultrafast pump-probe spectroscopy. The rise time of the differential reflectivity is interpreted by a combined effect of electron temperature relaxation and hot-phonon lifetime. The electron-phonon coupling constant of the bulk state (lambda = 0.63 +/- 0.05) is deduced from theoretical fitting. Increasing hot-phonon lifetime with decreasing temperature is attributed to a decreasing phonon-phonon collision rate. A complete analysis of the thermalization process is presented. Understanding carrier and phonon dynamics is essential for future optoelectronic and spintronic applications of topological insulators. (C) 2014 AIP Publishing LLC. | en_US |
| dc.identifier.doi | 10.1063/1.4904009 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4904009 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/124076 | |
| dc.identifier.wosnumber | WOS:000346266000052 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Temperature-dependent carrier-phonon coupling in topological insulator Bi2Se3 | en_US |
| dc.type | Article | en_US |