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Manganese ion implanted ultrananocrystalline diamond films: Optical and electrical characterization

dc.citation.epage0en_US
dc.citation.issue13en_US
dc.citation.spage0en_US
dc.citation.volume114en_US
dc.citation.woscount0en_US
dc.contributor.authorKunuku, Srinivasuen_US
dc.contributor.authorChen, Chien-Hsuen_US
dc.contributor.authorHsieh, Ping-Yenen_US
dc.contributor.authorLin, Bo-Rongen_US
dc.contributor.authorTai, Nyan-Hwaen_US
dc.contributor.authorNiu, Huanen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2019-05-02T00:25:58Z
dc.date.available2019-05-02T00:25:58Z
dc.date.issued2019-04-01en_US
dc.description.abstractWe report the optical and electrical properties of high-dose (10(15)-10(17) ions/cm(2)) Mn-ion implanted ultrananocrystalline diamond (Mn-UNCD) films. Mn-ion implantation and post-annealing of UNCD films lead to the formation of Mn-related color centers, characterized in Mn-UNCD films by their zero phonon line emissions at 621.2 nm and phonon sidebands at 611.2 nm and 630.3 nm. Raman spectra of Mn-UNCD films indicated amorphization via high-dose Mn-ion implantation and that the annealing process results in graphitization of the films. The Mn-UNCD film implanted with the Mn-ion dose of 1017 ions/cm(2) exhibits a conductivity of 122.25 (Omega cm)(-1), as well as enhanced field electron emission (FEE) properties such as a turn-on field of 10.67 V/mu m and a FEE current density of 0.85 mA/cm(2).en_US
dc.identifier.doi10.1063/1.5084272en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.5084272en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/151681
dc.identifier.wosnumberWOS:000463657000008en_US
dc.language.isoen_USen_US
dc.titleManganese ion implanted ultrananocrystalline diamond films: Optical and electrical characterizationen_US
dc.typeArticleen_US

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