InGaP/InGaAs PHEMT with high IP3 for low noise applications
| dc.citation.epage | 778 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 777 | en_US |
| dc.citation.volume | 40 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Lin, YC | en_US |
| dc.contributor.author | Chang, EY | en_US |
| dc.contributor.author | Chen, GJ | en_US |
| dc.contributor.author | Lee, HM | en_US |
| dc.contributor.author | Huang, GW | en_US |
| dc.contributor.author | Biswas, D | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
| dc.date.accessioned | 2014-12-08T15:38:58Z | |
| dc.date.available | 2014-12-08T15:38:58Z | |
| dc.date.issued | 2004-06-10 | en_US |
| dc.description.abstract | A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IN was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity. | en_US |
| dc.identifier.doi | 10.1049/el:20040458 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:20040458 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26677 | |
| dc.identifier.wosnumber | WOS:000222386200044 | |
| dc.language.iso | en_US | en_US |
| dc.title | InGaP/InGaAs PHEMT with high IP3 for low noise applications | en_US |
| dc.type | Article | en_US |