TUNGSTEN SILICIDE PREPARED BY COEVAPORATION OF W AND SI SUBSTANCES
| dc.citation.epage | C87 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | C87 | en_US |
| dc.citation.volume | 131 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | CHEN, MC | en_US |
| dc.contributor.author | JOHN, DY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:06:18Z | |
| dc.date.available | 2014-12-08T15:06:18Z | |
| dc.date.issued | 1984 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4887 | |
| dc.identifier.wosnumber | WOS:A1984SG56000140 | |
| dc.language.iso | en_US | en_US |
| dc.title | TUNGSTEN SILICIDE PREPARED BY COEVAPORATION OF W AND SI SUBSTANCES | en_US |
| dc.type | Meeting Abstract | en_US |
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