Bipolar Cascade Superluminescent Diodes at the 1.04-mu m Wavelength Regime

dc.citation.epage330en_US
dc.citation.issue5en_US
dc.citation.spage328en_US
dc.citation.volume21en_US
dc.citation.woscount2
dc.contributor.authorGuol, Shi-Haoen_US
dc.contributor.authorWang, Jr-Hungen_US
dc.contributor.authorWu, Yu-Hueien_US
dc.contributor.authorLin, Weien_US
dc.contributor.authorYang, Ying-Jayen_US
dc.contributor.authorSun, Chi-Kuangen_US
dc.contributor.authorPan, Ci-Lingen_US
dc.contributor.authorShi, Jin-Weien_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:09:57Z
dc.date.available2014-12-08T15:09:57Z
dc.date.issued2009-03-01en_US
dc.description.abstractIn this study, we investigate the performance of GaAs-based bipolar cascade superluminescent diodes with different cavity lengths. The device operates around the important bio-optical therapeutic 1.04-mu m wavelength window. The introduction of tunnel junctions tends to minimize the nonuniform carrier distribution between distinct multiple quantum-wells (QWs), which is a problem in conventional SLDs, whose electroluminescent spectra are governed by the center wavelength of QWs near the p-side. Our devices exhibit nice electrical characteristics of low leakage current and overcome the limitation of nonuniform carrier distribution, thereby presenting a promising prospect for the near infrared white-light sources.en_US
dc.identifier.doi10.1109/LPT.2008.2011140en_US
dc.identifier.issn1041-1135en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2008.2011140en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/7606
dc.identifier.wosnumberWOS:000264413700001
dc.language.isoen_USen_US
dc.subjectAmplified spontaneous emissionen_US
dc.subjectGaAsen_US
dc.subjectsuperluminescent diodesen_US
dc.titleBipolar Cascade Superluminescent Diodes at the 1.04-mu m Wavelength Regimeen_US
dc.typeArticleen_US

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