High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate
| dc.citation.issue | 17 | en_US |
| dc.citation.volume | 108 | en_US |
| dc.contributor.author | Wu, Di-Cheng | en_US |
| dc.contributor.author | Pan, You-Wei | en_US |
| dc.contributor.author | Wu, Jenq-Shinn | en_US |
| dc.contributor.author | Lin, Shih-Wei | en_US |
| dc.contributor.author | Lin, Sheng-Di | en_US |
| dc.contributor.department | 電機學院 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | College of Electrical and Computer Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:55:22Z | |
| dc.date.available | 2017-04-21T06:55:22Z | |
| dc.date.issued | 2016-04-25 | en_US |
| dc.description.abstract | We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3% and a sensitivity of 488.1 Omega/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications. Published by AIP Publishing. | en_US |
| dc.identifier.doi | 10.1063/1.4948251 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4948251 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/133807 | |
| dc.identifier.wosnumber | WOS:000375846600024 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate | en_US |
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