Observations of Al segregation around dislocations in AlGaN
| dc.citation.epage | 930 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 928 | en_US |
| dc.citation.volume | 79 | en_US |
| dc.citation.woscount | 11 | |
| dc.contributor.author | Chang, L | en_US |
| dc.contributor.author | Lai, SK | en_US |
| dc.contributor.author | Chen, FR | en_US |
| dc.contributor.author | Kai, JJ | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:43:34Z | |
| dc.date.available | 2014-12-08T15:43:34Z | |
| dc.date.issued | 2001-08-13 | en_US |
| dc.description.abstract | Transmission electron microscopy has been used to observe Al segregation around the threading dislocations in Al0.1Ga0.9N and Al0.3Ga0.7N grown by metalorganic chemical vapor deposition on 6H-SiC. Dislocation lines were found to have up to 70% more Al concentration than those regions free of dislocations in the matrix. The Al-depleted regions around the dislocations are shown to be within a few nanometers from the dislocation lines. The results also show that more Al segregate to edge dislocations than to screw ones. (C) 2001 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1391409 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1391409 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29456 | |
| dc.identifier.wosnumber | WOS:000170277500012 | |
| dc.language.iso | en_US | en_US |
| dc.title | Observations of Al segregation around dislocations in AlGaN | en_US |
| dc.type | Article | en_US |