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A novel current memory circuit for AMOLEDs

dc.citation.epage1040en_US
dc.citation.issue6en_US
dc.citation.spage1037en_US
dc.citation.volume51en_US
dc.citation.woscount6
dc.contributor.authorLin, YCen_US
dc.contributor.authorShieh, HPDen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:39:08Z
dc.date.available2014-12-08T15:39:08Z
dc.date.issued2004-06-01en_US
dc.description.abstractA novel switched-current (SI) memory circuit with improved accuracy and operating frequency for active-matrix organic light-emitting displays (AMOLEDs) was developed. The proposed SI memory, constructed from current memory structure, can not only reduce the influence of charge-injection without using-larger storage capacitor, but also realize the significant amount of speed up by means of small storage capacitor. Furthermore, the capability of copying the current signal is achieved without relying on the matching of device characteristics. The proposed SI memory circuit was implemented by low temperature poly-silicon technology and is suitable for current driving scheme-based high-resolution AMOLED applications.en_US
dc.identifier.doi10.1109/TED.2004.827371en_US
dc.identifier.issn0018-9383en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2004.827371en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/26740
dc.identifier.wosnumberWOS:000221660100030
dc.language.isoen_USen_US
dc.subjectactive matrixen_US
dc.subjectactive matrix organic light-emitting displays (AMOLEDs)en_US
dc.subjectcurrent memoryen_US
dc.subjectlow temperature poly-silicon thin-film transistors (LTPS-TFT)en_US
dc.subjectorganic light-emitting displays (OLEDs)en_US
dc.subjectswitched currenten_US
dc.titleA novel current memory circuit for AMOLEDsen_US
dc.typeArticleen_US

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