Comment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements'
| dc.citation.volume | 20 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Lin, Juhn-Jong | en_US |
| dc.contributor.author | Wu, Chih-Yuan | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Institute of Physics | en_US |
| dc.date.accessioned | 2019-04-02T05:58:44Z | |
| dc.date.available | 2019-04-02T05:58:44Z | |
| dc.date.issued | 2009-11-18 | en_US |
| dc.description.abstract | We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation. | en_US |
| dc.identifier.doi | 10.1088/0957-4484/20/46/468001 | en_US |
| dc.identifier.issn | 0957-4484 | en_US |
| dc.identifier.journal | NANOTECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0957-4484/20/46/468001 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/149846 | |
| dc.identifier.wosnumber | WOS:000271030200034 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Comment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements' | en_US |
| dc.type | Article | en_US |
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