Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament
| dc.citation.issue | 34 | en_US |
| dc.citation.spage | 5028 | en_US |
| dc.citation.volume | 27 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Chen, Jui-Yuan | en_US |
| dc.contributor.author | Huang, Chun-Wei | en_US |
| dc.contributor.author | Chiu, Chung-Hua | en_US |
| dc.contributor.author | Huang, Yu-Ting | en_US |
| dc.contributor.author | Wu, Wen-Wei | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2015-12-02T02:59:30Z | |
| dc.date.available | 2015-12-02T02:59:30Z | |
| dc.date.issued | 2015-09-09 | en_US |
| dc.description.abstract | The filament in a Au/Ta2O5/Au system is analyzed and determined to be a nanoscaled TaO2-x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen-vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects. | en_US |
| dc.identifier.doi | 10.1002/adma.201502758 | en_US |
| dc.identifier.issn | 0935-9648 | en_US |
| dc.identifier.journal | ADVANCED MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/adma.201502758 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/128281 | |
| dc.identifier.wosnumber | WOS:000360981800012 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament | en_US |
| dc.type | Article | en_US |
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