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EFFECTS OF ENERGY-BAND MODEL ON MAGNETORESISTANCE IN BISMUTH

dc.citation.epage71en_US
dc.citation.issue1-2en_US
dc.citation.spage65en_US
dc.citation.volume64en_US
dc.citation.woscount6
dc.contributor.authorCHEN, MHen_US
dc.contributor.authorWU, CCen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:06:10Z
dc.date.available2014-12-08T15:06:10Z
dc.date.issued1986-07-01en_US
dc.identifier.doi10.1007/BF00681542en_US
dc.identifier.issn0022-2291en_US
dc.identifier.journalJOURNAL OF LOW TEMPERATURE PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1007/BF00681542en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4736
dc.identifier.wosnumberWOS:A1986D373500005
dc.language.isoen_USen_US
dc.titleEFFECTS OF ENERGY-BAND MODEL ON MAGNETORESISTANCE IN BISMUTHen_US
dc.typeArticleen_US

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