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Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals

dc.citation.epageen_US
dc.citation.issue19en_US
dc.citation.volume115en_US
dc.citation.woscount0
dc.contributor.authorChou, Yenen_US
dc.contributor.authorLi, Hsiang-Weien_US
dc.contributor.authorYin, Yu-Fengen_US
dc.contributor.authorWang, Yu-Tingen_US
dc.contributor.authorLin, Yen-Chenen_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorWu, Yuh-Rennen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorHuang, Jian Jangen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:36:22Z
dc.date.available2014-12-08T15:36:22Z
dc.date.issued2014-05-21en_US
dc.description.abstractFabricating photonic crystals (PhCs) on GaN based non-polar light emitting diodes (LEDs) is an effective way to increase light extraction and meanwhile to preserve or improve polarization ratio. In this work, a-plane GaN LEDs with two-dimensional PhCs were demonstrated. With the E // m polarized modes (which mean the optical polarization with the electric field parallel to m-axis) as the target of diffraction, we matched E//m modes to the photonic bands and aligned E//c modes to fall within the photonic band gap. The results show stronger E//m but weaker E//c mode diffractions on both c- and m-axes. At the vertical direction, the polarization ratio is enhanced from 45.8% for the planar device to 52.3% for the LEDs with PhCs. (C) 2014 AIP Publishing LLC.en_US
dc.identifier.doi10.1063/1.4876655en_US
dc.identifier.issn0021-8979en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4876655en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/24709
dc.identifier.wosnumberWOS:000336920200007
dc.language.isoen_USen_US
dc.titlePolarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystalsen_US
dc.typeArticleen_US

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