Formation of D- centers in GaAs/AlGaAs quantum wells

dc.citation.epage	526	en_US
dc.citation.spage	519	en_US
dc.citation.volume	36	en_US
dc.citation.woscount	1	en_US
dc.contributor.author	Lee, CH	en_US
dc.contributor.author	Chang, YH	en_US
dc.contributor.author	Lin, HH	en_US
dc.contributor.author	Lee, CP	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2019-04-02T05:59:25Z
dc.date.available	2019-04-02T05:59:25Z
dc.date.issued	1998-06-01	en_US
dc.description.abstract	Three different experiments were employed to study the behaviors of neutral (D-0) and negatively charged donors (D-) in doped GaAs/AlGaAs multiple quantum wells. The existence of the D- centers in such structures were demonstrated, and its optical properties were investigated. The spectral responses of such systems under different experimental conditions, such as different barrier doping concentration, different temperature, and different exposure to light illumination were studied. A potential fluctuation model was proposed to explain the experimental results.	en_US
dc.identifier.issn	0577-9073	en_US
dc.identifier.journal	CHINESE JOURNAL OF PHYSICS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/150193
dc.identifier.wosnumber	WOS:000074180300006	en_US
dc.language.iso	en_US	en_US
dc.title	Formation of D- centers in GaAs/AlGaAs quantum wells	en_US
dc.type	Article	en_US

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