High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C
| dc.citation.epage | 847 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 845 | en_US |
| dc.citation.volume | 29 | en_US |
| dc.citation.woscount | 37 | |
| dc.contributor.author | Cheng, C. H. | en_US |
| dc.contributor.author | Lin, S. H. | en_US |
| dc.contributor.author | Jhou, K. Y. | en_US |
| dc.contributor.author | Chen, W. J. | en_US |
| dc.contributor.author | Chou, C. P. | en_US |
| dc.contributor.author | Yeh, F. S. | en_US |
| dc.contributor.author | Hu, J. | en_US |
| dc.contributor.author | Hwang, M. | en_US |
| dc.contributor.author | Arikado, T. | en_US |
| dc.contributor.author | McAlister, S. P. | en_US |
| dc.contributor.department | 機械工程學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Mechanical Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:11:06Z | |
| dc.date.available | 2014-12-08T15:11:06Z | |
| dc.date.issued | 2008-08-01 | en_US |
| dc.description.abstract | We report Ir/TiO(2)/TaN metal-insulator-metal capacitors processed at only 300 degrees C, which show a capacitance density of 28 fF/mu m(2) and a leakage current of 3 x 10(-8) (25 degrees C) or 6 x 10(-7) (125 degrees C) A/cm(2) at -1 V. This performance is due to the combined effects of 300 degrees C nanocrystallized high-kappa, TiO(2), a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies. | en_US |
| dc.identifier.doi | 10.1109/LED.2008.2000833 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2008.2000833 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8516 | |
| dc.identifier.wosnumber | WOS:000258096000008 | |
| dc.language.iso | en_US | en_US |
| dc.subject | high kappa | en_US |
| dc.subject | Ir | en_US |
| dc.subject | metal-insulator-metal (MIM) | en_US |
| dc.subject | TiO(2) | en_US |
| dc.title | High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C | en_US |
| dc.type | Article | en_US |