Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride

dc.citation.epage	269	en_US
dc.citation.issue	4	en_US
dc.citation.spage	267	en_US
dc.citation.volume	26	en_US
dc.contributor.author	Lu, TY	en_US
dc.contributor.author	Chao, TS	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.date.accessioned	2014-12-08T15:19:27Z
dc.date.available	2014-12-08T15:19:27Z
dc.date.issued	2005-04-01	en_US
dc.description.abstract	A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (G(M)) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the G(M) of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the G(M) further to 29% more than the single-poly-Si gate structure without SiN capping layer.	en_US
dc.identifier.doi	10.1109/LED.2005.845499	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2005.845499	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/13862
dc.language.iso	en_US	en_US
dc.title	Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride	en_US
dc.type	Article	en_US

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