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INVESTIGATIONS ON THE COMPOSITIONAL NONUNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP BY LP-MOCVD USING EDMI, TMI, TEG, AND TMG AS GROUP-III SOURCES

dc.citation.epage980en_US
dc.citation.issue1-4en_US
dc.citation.spage978en_US
dc.citation.volume145en_US
dc.citation.woscount0
dc.contributor.authorCHAN, SHen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorSZE, SMen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:03:41Z
dc.date.available2014-12-08T15:03:41Z
dc.date.issued1994-12-01en_US
dc.identifier.doi10.1016/0022-0248(94)91178-9en_US
dc.identifier.issn0022-0248en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.identifier.urihttp://dx.doi.org/10.1016/0022-0248(94)91178-9en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/2225
dc.identifier.wosnumberWOS:A1994QC54300159
dc.language.isoen_USen_US
dc.titleINVESTIGATIONS ON THE COMPOSITIONAL NONUNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP BY LP-MOCVD USING EDMI, TMI, TEG, AND TMG AS GROUP-III SOURCESen_US
dc.typeMeeting Abstracten_US

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