STUDY OF CHARACTERISTICS OF A MG-SI DIODE
| dc.citation.epage | 510 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 507 | en_US |
| dc.citation.volume | 36 | en_US |
| dc.contributor.author | MA, CH | en_US |
| dc.contributor.author | YANG, WC | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.department | 工學院 | zh_TW |
| dc.contributor.department | College of Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:07:13Z | |
| dc.date.available | 2014-12-08T15:07:13Z | |
| dc.date.issued | 1974-01-01 | en_US |
| dc.description.abstract | en_US | |
| dc.identifier.issn | 0020-7217 | en_US |
| dc.identifier.journal | INTERNATIONAL JOURNAL OF ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5685 | |
| dc.language.iso | en_US | en_US |
| dc.title | STUDY OF CHARACTERISTICS OF A MG-SI DIODE | en_US |
| dc.type | Article | en_US |
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