Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure
| dc.citation.epage | 1590 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 1588 | en_US |
| dc.citation.volume | 8 | en_US |
| dc.contributor.author | Lin, G | en_US |
| dc.contributor.author | Yen, ST | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.author | Liu, DC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:02:11Z | |
| dc.date.available | 2014-12-08T15:02:11Z | |
| dc.date.issued | 1996-12-01 | en_US |
| dc.description.abstract | We report on a very small vertical far-field angle achieved by lasers with a specially designed structure. For an InGaAs-AlGaAs quantum-well laser with a 2.5-mu m-wide ridge waveguide, the far-field pattern has a vertical far-field angle of 13 degrees and a lateral far-field angle of 8 degrees. Meanwhile, the threshold current remains acceptably low (approximate to 36 mA for a 500-mu m-long cavity), The slope efficiency of the L-I characteristic is high (>0.9 W/A) compared to that of the conventional laser. | en_US |
| dc.identifier.doi | 10.1109/68.544686 | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/68.544686 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/877 | |
| dc.language.iso | en_US | en_US |
| dc.title | Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure | en_US |
| dc.type | Article | en_US |