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THE EFFECT OF SINTERING CONDITIONS ON THE GRAIN-GROWTH OF THE BATIO3-BASED GBBL CAPACITORS

dc.citation.epage3893en_US
dc.citation.issue11en_US
dc.citation.spage3889en_US
dc.citation.volume23en_US
dc.citation.woscount8
dc.contributor.authorCHIOU, BSen_US
dc.contributor.authorLIN, STen_US
dc.contributor.authorDUH, JGen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:05:56Z
dc.date.available2014-12-08T15:05:56Z
dc.date.issued1988-11-01en_US
dc.identifier.doi10.1007/BF01106810en_US
dc.identifier.issn0022-2461en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCEen_US
dc.identifier.urihttp://dx.doi.org/10.1007/BF01106810en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4477
dc.identifier.wosnumberWOS:A1988R300200015
dc.language.isoen_USen_US
dc.titleTHE EFFECT OF SINTERING CONDITIONS ON THE GRAIN-GROWTH OF THE BATIO3-BASED GBBL CAPACITORSen_US
dc.typeArticleen_US

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