High-Performance (Al(x)Ga(1-x))(0.5)In(0.5)P-Based Flip-Chip Light-Emitting Diode With a Geometric Sapphire Shaping Structure

Abstract

AlGaInP-based flip-chip light-emitting diodes (LEDs) with geometric sapphire shaping structures were fabricated by sapphire chemical etching and glue-bonded techniques. Furthermore, a nanoscale rough texture was applied on the epiwafer surface. This novel structure improved the output light power, wall-plug efficiency, and reliability. The output power of this structure was enhanced 31.2% under 350-mA current injection as compared with the conventional AlGaInP flip-chip LEDs.