Well-posedness of the hydrodynamic model for semiconductors
| dc.citation.epage | 1507 | en_US |
| dc.citation.issue | 18 | en_US |
| dc.citation.spage | 1489 | en_US |
| dc.citation.volume | 19 | en_US |
| dc.contributor.author | Yeh, LM | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 應用數學系 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Applied Mathematics | en_US |
| dc.date.accessioned | 2014-12-08T15:02:12Z | |
| dc.date.available | 2014-12-08T15:02:12Z | |
| dc.date.issued | 1996-12-01 | en_US |
| dc.description.abstract | This paper concerns the well-posedness of the hydrodynamic model for semiconductor devices, a quasi-linear elliptic-parbolic-hyperbolic system. Boundary conditions for elliptic and parabolic equations are Dirichlet conditions while boundary conditions for the hyperbolic equations are assumed to be well-posed in L(2) sense. Maximally strictly dissipative boundary conditions for the hyperbolic equations satisfy the assumption of well-posedness in L(2) sense. The well-posedness of the model under the boundary conditions is demonstrated. | en_US |
| dc.identifier.issn | 0170-4214 | en_US |
| dc.identifier.journal | MATHEMATICAL METHODS IN THE APPLIED SCIENCES | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/890 | |
| dc.language.iso | en_US | en_US |
| dc.title | Well-posedness of the hydrodynamic model for semiconductors | en_US |
| dc.type | Article | en_US |