Reduction of nickel-silicided junction leakage by nitrogen ion implantation
| dc.citation.epage | L126 | en_US |
| dc.citation.issue | 2A | en_US |
| dc.citation.spage | L124 | en_US |
| dc.citation.volume | 41 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Lee, LY | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:42:49Z | |
| dc.date.available | 2014-12-08T15:42:49Z | |
| dc.date.issued | 2002-02-01 | en_US |
| dc.description.abstract | Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 x 10(-9) A/cm(2), which represents 2-4 times reduction compared to conventional counterparts. | en_US |
| dc.identifier.doi | 10.1143/JJAP.41.L124 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.41.L124 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29027 | |
| dc.identifier.wosnumber | WOS:000173882700011 | |
| dc.language.iso | en_US | en_US |
| dc.subject | nickel | en_US |
| dc.subject | silicide | en_US |
| dc.subject | junction | en_US |
| dc.subject | leakage | en_US |
| dc.subject | nitrogen | en_US |
| dc.title | Reduction of nickel-silicided junction leakage by nitrogen ion implantation | en_US |
| dc.type | Article | en_US |