Metal-organic CVD of tantalum oxide from tert-butylimidotris(diethylamido)tantalum and oxygen
| dc.citation.epage | + | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 223 | en_US |
| dc.citation.volume | 6 | en_US |
| dc.citation.woscount | 14 | |
| dc.contributor.author | Chiu, HT | en_US |
| dc.contributor.author | Wang, CN | en_US |
| dc.contributor.author | Chuang, SH | en_US |
| dc.contributor.department | 應用化學系 | zh_TW |
| dc.contributor.department | Department of Applied Chemistry | en_US |
| dc.date.accessioned | 2014-12-08T15:44:45Z | |
| dc.date.available | 2014-12-08T15:44:45Z | |
| dc.date.issued | 2000-10-01 | en_US |
| dc.description.abstract | Tantalum oxide is a high dielectric material suitable for DRAM applications. CVD results using tert-butyl-imidotris(diethylamido)tantalum precursor are encouraging. AFM (see Figure), XRD, XPS, and Auger indicate that, on annealing, the deposited films crystallize to beta-Ta2O5 with uniform Ta and O distribution. Metal oxide semiconductor (MOS) capacitors fabricated from these films are also evaluated. | en_US |
| dc.identifier.issn | 0948-1907 | en_US |
| dc.identifier.journal | CHEMICAL VAPOR DEPOSITION | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30213 | |
| dc.identifier.wosnumber | WOS:000089889400005 | |
| dc.language.iso | en_US | en_US |
| dc.title | Metal-organic CVD of tantalum oxide from tert-butylimidotris(diethylamido)tantalum and oxygen | en_US |
| dc.type | Article | en_US |