Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen
| dc.citation.epage | L124 | en_US |
| dc.citation.issue | 2A | en_US |
| dc.citation.spage | L122 | en_US |
| dc.citation.volume | 37 | en_US |
| dc.contributor.author | Chen, LP | en_US |
| dc.contributor.author | Chan, YC | en_US |
| dc.contributor.author | Chang, SJ | en_US |
| dc.contributor.author | Huang, GW | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:49:23Z | |
| dc.date.available | 2014-12-08T15:49:23Z | |
| dc.date.issued | 1998-02-01 | en_US |
| dc.description.abstract | Oxidation of Si1-xGex films has been carried out by direct photo chemical Vapor deposition (direct photo-CVD) directly with activated O-2 induced by Vacuum-Ultra-Violet (VUV) light radiation, The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed, This might be the reason that Cc pileup effect is eliminated in this study. | en_US |
| dc.identifier.doi | 10.1143/JJAP.37.L122 | en_US |
| dc.identifier.issn | en_US | |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.37.L122 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32827 | |
| dc.language.iso | en_US | en_US |
| dc.subject | SiGe | en_US |
| dc.subject | photo-CVD | en_US |
| dc.subject | VUV | en_US |
| dc.subject | Auger profile | en_US |
| dc.subject | X-ray photoelectron spectroscopy | en_US |
| dc.title | Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen | en_US |
| dc.type | Article | en_US |