Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition
| dc.citation.epage | 7487 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 7485 | en_US |
| dc.citation.volume | 44 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Chen, IL | en_US |
| dc.contributor.author | Hsu, WC | en_US |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Yu, HC | en_US |
| dc.contributor.author | Sung, CP | en_US |
| dc.contributor.author | Lu, CM | en_US |
| dc.contributor.author | Chiou, CH | en_US |
| dc.contributor.author | Wang, JM | en_US |
| dc.contributor.author | Chang, YH | en_US |
| dc.contributor.author | Lee, TD | en_US |
| dc.contributor.author | Wang, JS | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:18:15Z | |
| dc.date.available | 2014-12-08T15:18:15Z | |
| dc.date.issued | 2005-10-01 | en_US |
| dc.description.abstract | A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214 nm were realized. A measured room-temperature threshold current density of only 173 A/cm(2) for a 2-mm-cavity device and a transparency current density of 66 A/cm(2) were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6 cm(-1), respectively. | en_US |
| dc.identifier.doi | 10.1143/JJAP.44.7485 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.44.7485 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13196 | |
| dc.identifier.wosnumber | WOS:000232739300058 | |
| dc.language.iso | en_US | en_US |
| dc.subject | InGaAs | en_US |
| dc.subject | MOCVD | en_US |
| dc.subject | transparency current density | en_US |
| dc.title | Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition | en_US |
| dc.type | Article | en_US |