Comparison between c-cut and A-cut Nd : YVO4 lasers passively Q-switched with a Cr4+: YAG saturable absorber
| dc.citation.epage | 418 | en_US |
| dc.citation.issue | 4-5 | en_US |
| dc.citation.spage | 415 | en_US |
| dc.citation.volume | 74 | en_US |
| dc.citation.woscount | 72 | |
| dc.contributor.author | Chen, YF | en_US |
| dc.contributor.author | Lan, YP | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:42:32Z | |
| dc.date.available | 2014-12-08T15:42:32Z | |
| dc.date.issued | 2002-04-01 | en_US |
| dc.description.abstract | Comparison between c-cut and a-cut Nd:YVO4 microchip lasers passively Q-switched with a Cr4+:YAG saturable absorber is experimentally made. The lower emission cross section of the c-cut Nd:YVO4 crystal can enhance the passive Q-switching effect to produce a peak power 10 times higher than that obtained with the a-cut crystal. The experimental result further reveals that a c-cut Nd:YVO4 crystal is a very convenient material for short-pulse (sub-nanosecond) and high-peak-power (> 10 kW) lasers. | en_US |
| dc.identifier.doi | 10.1007/s003400200814 | en_US |
| dc.identifier.issn | 0946-2171 | en_US |
| dc.identifier.journal | APPLIED PHYSICS B-LASERS AND OPTICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/s003400200814 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28879 | |
| dc.identifier.wosnumber | WOS:000174854800018 | |
| dc.language.iso | en_US | en_US |
| dc.title | Comparison between c-cut and A-cut Nd : YVO4 lasers passively Q-switched with a Cr4+: YAG saturable absorber | en_US |
| dc.type | Article | en_US |