Subsonic solutions of hydrodynamic model for semiconductors
| dc.citation.epage | 1410 | en_US |
| dc.citation.issue | 16 | en_US |
| dc.citation.spage | 1389 | en_US |
| dc.citation.volume | 20 | en_US |
| dc.citation.woscount | 13 | |
| dc.contributor.author | Yeh, LM | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 應用數學系 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Applied Mathematics | en_US |
| dc.date.accessioned | 2014-12-08T15:01:19Z | |
| dc.date.available | 2014-12-08T15:01:19Z | |
| dc.date.issued | 1997-11-10 | en_US |
| dc.description.abstract | This paper is concerned with the existence and uniqueness of the steady-state solution of hydrodynamic model for semiconductor devices. Boundary conditions are prescribed by vorticity on inflow boundary as well as by electron density, temperature, and normal component of electron velocity on whole boundary. If the ambient temperature is large, and if both vorticity on inflow boundary and the variation of density on boundary are small, a unique subsonic solution exists. (C) 1997 by B.G. Teubner Stuttgart-John Wiley & Sons Ltd. | en_US |
| dc.identifier.issn | 0170-4214 | en_US |
| dc.identifier.journal | MATHEMATICAL METHODS IN THE APPLIED SCIENCES | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/192 | |
| dc.identifier.wosnumber | WOS:A1997YA18700003 | |
| dc.language.iso | en_US | en_US |
| dc.title | Subsonic solutions of hydrodynamic model for semiconductors | en_US |
| dc.type | Article | en_US |