Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy
| dc.citation.epage | en_US | |
| dc.citation.issue | 5 | en_US |
| dc.citation.volume | 100 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Lin, S. D. | en_US |
| dc.contributor.author | Lin, Z. C. | en_US |
| dc.contributor.author | Lee, C. P. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:15:56Z | |
| dc.date.available | 2014-12-08T15:15:56Z | |
| dc.date.issued | 2006-09-01 | en_US |
| dc.description.abstract | Self-assembled GaAs nanostructures in In0.53Ga0.47As matrix on (100) InP substrate have been investigated using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). In measured AFM images, dotlike and wirelike GaAs nanostructures were obtained with different deposition thicknesses. The XTEM images clearly showed composition modulation in the overgrown InGaAs matrix. The reason for this composition modulation is explained by strain field compensation and surface energy minimization. (c) 2006 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2345031 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2345031 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11877 | |
| dc.identifier.wosnumber | WOS:000240602500105 | |
| dc.language.iso | en_US | en_US |
| dc.title | Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy | en_US |
| dc.type | Article | en_US |