Improved external quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened surface
| dc.citation.epage | 287 | en_US |
| dc.citation.issue | 1-4 | en_US |
| dc.citation.spage | 285 | en_US |
| dc.citation.volume | 20 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Lin, J. C. | en_US |
| dc.contributor.author | Su, Y. K. | en_US |
| dc.contributor.author | Chang, S. J. | en_US |
| dc.contributor.author | Lan, W. H. | en_US |
| dc.contributor.author | Huang, K. C. | en_US |
| dc.contributor.author | Cheng, Y. C. | en_US |
| dc.contributor.author | Lin, W. J. | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:49Z | |
| dc.date.available | 2014-12-08T15:12:49Z | |
| dc.date.issued | 2008-01-01 | en_US |
| dc.description.abstract | Gallium nitride p-i-n ultraviolet photodiodes (PDs) with a titanium dioxide (TiO2) nano-particles roughened surface have been fabricated. It was found that the responsivity and external quantum efficiency can be improved 60% on the surface roughened PDs. It was also found that light absorption can be enhanced from various incident angles by the TiO2 roughened surface. Furthermore, the high detectivity of 9.2 x 10(1.3) cm.Hz(1/2).W-1 can be achieved from the PD with a rough surface. | en_US |
| dc.identifier.doi | 10.1109/LPT.2007.915620 | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LPT.2007.915620 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9879 | |
| dc.identifier.wosnumber | WOS:000253225300092 | |
| dc.language.iso | en_US | en_US |
| dc.subject | gallium nitride (GaN) | en_US |
| dc.subject | p-i-n | en_US |
| dc.subject | photodiodes (PDs) | en_US |
| dc.subject | surface roughness | en_US |
| dc.subject | titanium dioxide (TiO2) | en_US |
| dc.title | Improved external quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened surface | en_US |
| dc.type | Article | en_US |