Reliable Doping Technique for WSe2 by W: Ta Co-Sputtering Process
| dc.citation.epage | 59 | en_US |
| dc.citation.spage | 58 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Chien, Po-Yen | en_US |
| dc.contributor.author | Zhang, Ming | en_US |
| dc.contributor.author | Huang, Shao-Chia | en_US |
| dc.contributor.author | Lee, Min-Hung | en_US |
| dc.contributor.author | Hsu, Hung-Ru | en_US |
| dc.contributor.author | Ho, Yen-Teng | en_US |
| dc.contributor.author | Chu, Yung-Ching | en_US |
| dc.contributor.author | Jong, Chao-An | en_US |
| dc.contributor.author | Woo, Jason | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2017-04-21T06:48:46Z | |
| dc.date.available | 2017-04-21T06:48:46Z | |
| dc.date.issued | 2016 | en_US |
| dc.description.abstract | The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6x10(13)cm(-2)) and good effective hole mobility (16.5cm(2)/Vs) were realized. As a result, low sheet resistance (17k Omega/sq) and contact resistance with Pd metal (11.4k Omega-mu m) were measured using TLM structures. | en_US |
| dc.identifier.isbn | 978-1-5090-0726-4 | en_US |
| dc.identifier.journal | 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/134675 | |
| dc.identifier.wosnumber | WOS:000391250500025 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Reliable Doping Technique for WSe2 by W: Ta Co-Sputtering Process | en_US |
| dc.type | Proceedings Paper | en_US |
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