CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O
| dc.citation.epage | L35 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | L34 | en_US |
| dc.citation.volume | 142 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | CHAO, TS | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:03:30Z | |
| dc.date.available | 2014-12-08T15:03:30Z | |
| dc.date.issued | 1995-03-01 | en_US |
| dc.description.abstract | Growth mechanisms of three different orientations Si wafer oxidized in N2O have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 Angstrom. From our results, this phenomenon is closely related with the initial native oxide before oxidation. | en_US |
| dc.identifier.doi | 10.1149/1.2048576 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.2048576 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2027 | |
| dc.identifier.wosnumber | WOS:A1995QL58500002 | |
| dc.language.iso | en_US | en_US |
| dc.title | CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O | en_US |
| dc.type | Letter | en_US |