Investigation of inversion capacitance-voltage reconstruction for metal oxide semiconductor field effect transistors with leaky dielectrics using BSIM4/SPICE and intrinsic input resistance model

Abstract

This paper presents an inversion capacitance-voltage (C-V) reconstruction method for long-channel metal oxide semiconductor field effect transistors (MOSFETs) using the BSIM4/SPICE and the intrinsic input resistance (R-ii) model. The concept of Rii has been validated by segmented BSIM4/SPICE simulation. Since the Rii model is scalable with V-Gs and L, our R-ii approach is physically accurate. Due to its simplicity, this method may provide an option for regular process monitoring purposes.