Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires
| dc.citation.epage | en_US | |
| dc.citation.issue | 7 | en_US |
| dc.citation.volume | 18 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Lin, Z. C. | en_US |
| dc.contributor.author | Hsieh, W. H. | en_US |
| dc.contributor.author | Lee, C. P. | en_US |
| dc.contributor.author | Suen, Y. W. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:14:39Z | |
| dc.date.available | 2014-12-08T15:14:39Z | |
| dc.date.issued | 2007-02-21 | en_US |
| dc.description.abstract | Strong asymmetry of electron mobility in InGaAs/InAlAs heterostructures (lattice matched to InP) with the presence of InAs quantum wires was observed. Self-assembled InAs quantum wires, embedded in an InGaAs matrix close to the hetero-interface, has a strong effect in electron conduction in the interface channel. The low temperature mobility for electrons moving parallel to the quantum wires is much higher than that of electrons moving perpendicular to the wires. The asymmetry in mobility is attributed to the difference in scattering cross section of the quantum wires in these two directions. | en_US |
| dc.identifier.doi | 10.1088/0957-4484/18/7/075403 | en_US |
| dc.identifier.issn | 0957-4484 | en_US |
| dc.identifier.journal | NANOTECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0957-4484/18/7/075403 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11109 | |
| dc.identifier.wosnumber | WOS:000243874200007 | |
| dc.language.iso | en_US | en_US |
| dc.title | Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires | en_US |
| dc.type | Article | en_US |