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Nonequilibrium Transport at a Dissipative Quantum Phase Transition

dc.citation.epage0en_US
dc.citation.issue21en_US
dc.citation.spage0en_US
dc.citation.volume102en_US
dc.citation.woscount29en_US
dc.contributor.authorChung, Chung-Houen_US
dc.contributor.authorLe Hur, Karynen_US
dc.contributor.authorVojta, Matthiasen_US
dc.contributor.authorWoelfle, Peteren_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2019-04-03T06:42:26Z
dc.date.available2019-04-03T06:42:26Z
dc.date.issued2009-05-29en_US
dc.description.abstractWe investigate the nonequilibrium transport near a quantum phase transition in a generic and relatively simple model, the dissipative resonant level model, that has many applications for nanosystems. We formulate a rigorous mapping and apply a controlled frequency-dependent renormalization group approach to compute the nonequilibrium current in the presence of a finite bias voltage V and a finite temperature T. For V -> 0, we find that the conductance has its well-known equilibrium form, while it displays a distinct nonequilibrium profile at finite voltage.en_US
dc.identifier.doi10.1103/PhysRevLett.102.216803en_US
dc.identifier.issn0031-9007en_US
dc.identifier.journalPHYSICAL REVIEW LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevLett.102.216803en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/7214
dc.identifier.wosnumberWOS:000266501600041en_US
dc.language.isoen_USen_US
dc.titleNonequilibrium Transport at a Dissipative Quantum Phase Transitionen_US
dc.typeArticleen_US

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