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High-peak-power passively Q-switched Nd : YAG laser at 946 nm

dc.citation.epage432en_US
dc.citation.issue3-4en_US
dc.citation.spage429en_US
dc.citation.volume91en_US
dc.citation.woscount8
dc.contributor.authorHuang, Y. P.en_US
dc.contributor.authorSu, K. W.en_US
dc.contributor.authorLi, A.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorHuang, K. F.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:11:23Z
dc.date.available2014-12-08T15:11:23Z
dc.date.issued2008-06-01en_US
dc.description.abstractWe demonstrate a high-peak-power quasi-continuous-wave diode-pumped passive Q-switched Nd:YAG laser at 946 nm. We make a thorough comparison of the output performance between the saturable absorbers of InGaAs quantum wells (QWs) and a Cr4+:YAG crystal. Experimental results reveal that the saturable absorber of InGaAs QWs is superior to the Cr4+:YAG crystal because of the low nonsaturable losses and leads to a pulse energy of 330 mu J with a peak power greater than 11 kW.en_US
dc.identifier.doi10.1007/s00340-008-2975-9en_US
dc.identifier.issn0946-2171en_US
dc.identifier.journalAPPLIED PHYSICS B-LASERS AND OPTICSen_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00340-008-2975-9en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/8737
dc.identifier.wosnumberWOS:000256251400005
dc.language.isoen_USen_US
dc.titleHigh-peak-power passively Q-switched Nd : YAG laser at 946 nmen_US
dc.typeArticleen_US

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