MOS DEVICE PARAMETER OPTIMIZATION BASED ON TRANSIENT TRAJECTORY CONSIDERATIONS
| dc.citation.epage | 495 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 489 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.author | JANG, WY | en_US |
| dc.contributor.author | LIU, ID | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:05:35Z | |
| dc.date.available | 2014-12-08T15:05:35Z | |
| dc.date.issued | 1990-05-01 | en_US |
| dc.identifier.doi | 10.1016/0038-1101(90)90232-4 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/0038-1101(90)90232-4 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4121 | |
| dc.identifier.wosnumber | WOS:A1990CZ72900003 | |
| dc.language.iso | en_US | en_US |
| dc.title | MOS DEVICE PARAMETER OPTIMIZATION BASED ON TRANSIENT TRAJECTORY CONSIDERATIONS | en_US |
| dc.type | Article | en_US |
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