Weak localization and electron-electron interaction in disordered V80Al20-xFex alloys at low temperature

Abstract

In this Letter we report on the electrical resistivity and magneto-resistivity of disordered V80Al20-xFex alloys in the temperature range 1.5 less than or equal to T less than or equal to 300 K and analyze them in the light of weak localization and electron-electron interaction. The low temperature zero field resistivity obeys a T-1/2 law, which is explained by electron-electron interaction. The low field magneto-resistivity is described by weak localization theory under strong spin-orbit interaction. The electron-phonon scattering rate obeys a quadratic temperature dependence. This observation is interpreted by the existing theories of electron-phonon interaction. (C) 2004 Elsevier B.V. All rights reserved.