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EFFECT OF NON-PARABOLICITY ON LONGITUDINAL CONDUCTIVITY OF DEGENERATE SEMICONDUCTORS FOR TRANSVERSE ULTRASOUND IN STRONG MAGNETIC-FIELDS

dc.citation.epage32en_US
dc.citation.issue1-2en_US
dc.citation.spage19en_US
dc.citation.volume49en_US
dc.citation.woscount2
dc.contributor.authorWU, CCen_US
dc.contributor.authorTSAI, Jen_US
dc.contributor.department應用數學系zh_TW
dc.contributor.departmentDepartment of Applied Mathematicsen_US
dc.date.accessioned2014-12-08T15:06:24Z
dc.date.available2014-12-08T15:06:24Z
dc.date.issued1982en_US
dc.identifier.doi10.1007/BF00681759en_US
dc.identifier.issn0022-2291en_US
dc.identifier.journalJOURNAL OF LOW TEMPERATURE PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1007/BF00681759en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4972
dc.identifier.wosnumberWOS:A1982PQ30100002
dc.language.isoen_USen_US
dc.titleEFFECT OF NON-PARABOLICITY ON LONGITUDINAL CONDUCTIVITY OF DEGENERATE SEMICONDUCTORS FOR TRANSVERSE ULTRASOUND IN STRONG MAGNETIC-FIELDSen_US
dc.typeArticleen_US

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