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GaSb/GaAs quantum dots and rings grown under periodical growth mode by using molecular beam epitaxy

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dc.citation.epage286en_US
dc.citation.spage283en_US
dc.citation.volume425en_US
dc.citation.woscount0en_US
dc.contributor.authorChen, Hsuan-Anen_US
dc.contributor.authorShih, Tung-Chuanen_US
dc.contributor.authorTang, Shiang-Fengen_US
dc.contributor.authorWeng, Ping-Kuoen_US
dc.contributor.authorGau, Yau-Tangen_US
dc.contributor.authorLin, Shih-Yenen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2015-12-02T02:59:04Z
dc.date.available2015-12-02T02:59:04Z
dc.date.issued2015-09-01en_US
dc.description.abstractGaSb/GaAs quantum dots (QDs) and quantum rings (QRs) are investigated. By using periodical growth interrupts, precise coverage control can be achieved for GaSb QD growth by using a single Ga source. With direct As irradiation to the substrate surface during the post soaking time, the soaking time can be effectively reduced while full ring morphologies and room-temperature QR luminescence can still be obtained by using this method. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jcrysgro.2015.03.053en_US
dc.identifier.issn0022-0248en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2015.03.053en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/127836
dc.identifier.wosnumberWOS:000356669200065en_US
dc.language.isoen_USen_US
dc.subjectNanostructuresen_US
dc.subjectMolecular beam epitaxyen_US
dc.titleGaSb/GaAs quantum dots and rings grown under periodical growth mode by using molecular beam epitaxyen_US
dc.typeArticleen_US

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