Electroless plating with Pd induced crystallization of amorphous silicon thin films
| dc.citation.epage | 6357 | en_US |
| dc.citation.issue | 11A | en_US |
| dc.citation.spage | 6356 | en_US |
| dc.citation.volume | 41 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Hu, GR | en_US |
| dc.contributor.author | Wu, YCS | en_US |
| dc.contributor.author | Chao, CW | en_US |
| dc.contributor.author | Huang, TJ | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:41:48Z | |
| dc.date.available | 2014-12-08T15:41:48Z | |
| dc.date.issued | 2002-11-01 | en_US |
| dc.description.abstract | A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550degreesC, two kinds of needlelike grains were found. The direction of the primary grain was along <211> and the growth of the secondary grain occurred along the <011> direction. | en_US |
| dc.identifier.doi | 10.1143/JJAP.41.6356 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.41.6356 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28431 | |
| dc.identifier.wosnumber | WOS:000182730100011 | |
| dc.language.iso | en_US | en_US |
| dc.subject | electroless plating | en_US |
| dc.subject | metal-induced-crystallization | en_US |
| dc.subject | amorphous silicon | en_US |
| dc.subject | polycrystalline silicon | en_US |
| dc.subject | thin film transistor | en_US |
| dc.title | Electroless plating with Pd induced crystallization of amorphous silicon thin films | en_US |
| dc.type | Article | en_US |