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Finite Element Models of Neuron Electrode Sealing Interfaces

dc.citation.epage646en_US
dc.citation.issue2en_US
dc.citation.spage643en_US
dc.citation.volume48en_US
dc.citation.woscount0
dc.contributor.authorChoi, Charles T. M.en_US
dc.contributor.authorYou, Shan-Jenen_US
dc.contributor.department分子醫學與生物工程研究所zh_TW
dc.contributor.department資訊工程學系zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentInstitute of Molecular Medicine and Bioengineeringen_US
dc.contributor.departmentDepartment of Computer Scienceen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.date.accessioned2014-12-08T15:21:24Z
dc.date.available2014-12-08T15:21:24Z
dc.date.issued2012-02-01en_US
dc.description.abstractIt is desirable to detect any leakage current when microelectrode is used to stimulate a neuron electrically. This paper proposes a new approach to study the neuron-electrode sealing interface problem. As opposite to the traditional bi-domain FEM that need a two-step process of indirect coupling of two domains with a circuit equation, which involves solving a set of ordinary differential equation, this paper proposed a more elegant approach to study the neuron-electrode sealing interface problem based on a single domain finite element model. The result shows the stimulation electrical potential distribution and the sealing resistance match the published simulation and experimental results.en_US
dc.identifier.doi10.1109/TMAG.2011.2175717en_US
dc.identifier.issn0018-9464en_US
dc.identifier.journalIEEE TRANSACTIONS ON MAGNETICSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMAG.2011.2175717en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/15232
dc.identifier.wosnumberWOS:000299509100120
dc.language.isoen_USen_US
dc.subjectBio-electric problemen_US
dc.subjectfinite element modelen_US
dc.subjectneuron-electrode interfaceen_US
dc.subjectsealing resistanceen_US
dc.titleFinite Element Models of Neuron Electrode Sealing Interfacesen_US
dc.typeArticleen_US

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