Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures
| dc.citation.epage | 1711 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 1708 | en_US |
| dc.citation.volume | 35 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Lin, You-Da | en_US |
| dc.contributor.author | Wu, Yewchung Sermon | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:15:51Z | |
| dc.date.available | 2014-12-08T15:15:51Z | |
| dc.date.issued | 2006-09-01 | en_US |
| dc.description.abstract | Effects of oxygen in Ni films on. the Ni-induced lateral crystallization (NILC) of amorphous silicon (a-Si) films at various temperatures have been investigated. It was found that oxygen in Ni films retarded the nucleation of polycrystalline silicon (poly-Si) from a-Si, but had little effect on the growth rate of poly-Si. This is because that needed an incubation period to be reduced to Ni metal for the subsequent mediated crystallization of a-Si. | en_US |
| dc.identifier.issn | 0361-5235 | en_US |
| dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11831 | |
| dc.identifier.wosnumber | WOS:000240529900004 | |
| dc.language.iso | en_US | en_US |
| dc.subject | nickel-induced lateral crystallization (NILC) | en_US |
| dc.subject | amorphous silicon | en_US |
| dc.subject | polycrystalline silicon | en_US |
| dc.subject | oxygen | en_US |
| dc.subject | nickel oxide | en_US |
| dc.title | Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures | en_US |
| dc.type | Article | en_US |