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Effect of oxygen on characteristics of nickel oxide/indium tin oxide heterojunction diodes

dc.citation.epageen_US
dc.citation.issue12en_US
dc.citation.volume100en_US
dc.citation.woscount5
dc.contributor.authorChang, Hung-Luen_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:15:12Z
dc.date.available2014-12-08T15:15:12Z
dc.date.issued2006-12-15en_US
dc.description.abstractp-nickel oxide (NiOx)/n-indium tin oxide heterostructure p-n junction diodes were fabricated on glass substrates and showed rectifying characteristics or negative differential resistance (NDR) characteristics depending on the content of oxygen in the NiOx films. After annealing the heterojunction diodes at 450 degrees C in air for about 30 min, the characteristics of NDR disappeared and transparent rectifying diodes were observed. The oxygen content could be observed by inspecting the characteristics of the NiOx films before and after annealing using x-ray photoelectron spectrum and thermogravimetric analysis as well as atomic force microscopy. The released oxygen in the NiOx films could be responsible for the disappearance of NDR characteristics and the change of the nonideal rectifying diode characteristics. (c) 2006 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.2404466en_US
dc.identifier.issn0021-8979en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2404466en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/11437
dc.identifier.wosnumberWOS:000243157900098
dc.language.isoen_USen_US
dc.titleEffect of oxygen on characteristics of nickel oxide/indium tin oxide heterojunction diodesen_US
dc.typeArticleen_US

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